Question is ⇒ If V = 100 ∠ 16°, the <span class="root">(V)</span> is, Options are ⇒ (A) 10 ∠ 32°, (B) 10 ∠ 8°, (C) 10 ∠ 16°, (D) 10 ∠ 4°, (E) , Leave your comments or Download question paper.

Question is ⇒ If V = 100 ∠ 16°, the <span class="root">(V)</span> is, Options are ⇒ (A) 10 ∠ 32°, (B) 10 ∠ 8°, (C) 10 ∠ 16°, (D) 10 ∠ 4°, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	If V = 100 ∠ 16°, the (V) is
A.	10 ∠ 32° [Wrong Answer]
B.	10 ∠ 8° [Correct Answer]
C.	10 ∠ 16° [Wrong Answer]
D.	10 ∠ 4° [Wrong Answer]
View Answer 1 -1 Explanation:- Answer : B Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ The instruction MOV r₁, r₂ in 8085
causes contents of registers r₂ to be moved to r, and uses register addressing
causes contents of registers r₁ to be moved to r₂ and uses register addressing
causes contents of registers r₁ to be moved to r₂ and uses register immediate addressing
causes contents of registers r₂ to be moved to r₁ and uses register immediate addressing

⇒ How many zone bits are th
2
4
8
16

⇒ How many different BCD number can be stored in a register containing 12 switches using an 8, 4, 2, 1 code?
99
100
999
1000

⇒ In figure, the magnitude
must be more than that of V_a
must be more than that of V_b
must be more than that of V_a or V_b
can be equal to or less than or more than that of V_a or V_b

⇒ The AM, PM, and TV broadcast frequencies are
of the same order as microwave range
much lower than microwave range
much higher than microwave range
either (a) or (c)

⇒ Which of the following statement about JFET is correct?
In an N-channel JFET, the channel is the narrowest under zero gate bias condition
In a JFET the gates are always forward biased
In a JFET, gate-source cut off voltage is numerically equal to the pinch off voltage
It is a voltage controlled device

⇒ In a 741 OP-amp, there is 20 dB/decade fall-off starting at a relatively low frequency. This is due to
applied load
internal compensation
impedance of the source
power dissipation in the chip

⇒

Assertion (A): In monolithic IC the components are part of one chip

Reason (R): An op-amp is a high gain dc amplifier

Both A and R are correct and R is correct explanation for A
Both A and R are correct but R is not correct explanation for A
A is correct R is wrong
A is wrong R is correct

⇒ A single phase step up cycloconverter changes 50 Hz to 100 Hz. Then one half wave of input will give rise to
one half wave of output
one full wave of output
two full waves of output
either (b) or (c)

⇒ Power diodes are generally
silicon diodes
germanium diodes
either of the above
none of the above

⇒ Some possible disadvantages of high level modulation in TV transmitters are

Video monitor has to supply high video voltages upto several hundred volts into highly capacitive loads drawing high current at video frequencies
The grid modulated stage presents a varying load to its driver
The linearity and high video driving power present design problems

Out of above which are true?
1 only
1 and 2 only
1, 2 and 3
2 and 3 only

⇒ Consider the following statements:

Taking 2's complement is equivalent to sign change.
In the 2's complement representation the most significant bit (MSB) is zero for a positive number.
In a 4 bit binary representation of a binary number A, A + 1's complement of A = 2⁴.

Which of the above statements are correct?
1 and 2 only
1 and 3 only
2 and 3 only
1, 2 and 3

⇒ In the signal flow graph of the given figure, the number of forward path
1
2
3
4

⇒ The poles of an RC function
are simple and lie on jω axis
are simple and lie on negative real axis
may be complex conjugate
may be anywhere in s plane

⇒ One of the advantages of base modulation over collector modulation of a transistor class C amplifier is
improved efficiency
better linearity
high power output per transistor
the lower modulating power requirement

⇒ Audio systems use transverse recording.
TRUE
FALSE

⇒ A register is
a group is memories
a group of devices that store digital data
a chip used in computers
a pure silica piece used in digital systems

⇒ A parity check usually can detect
one-bit error
double-bit error
three-bit error
any-bit error

⇒ Floating gate is fabricated for making MOS
ROM
PROM
EPROM
EAROM

⇒ A square corner reflector is used in
radio astronomy
tv broadcast
point to point communication
all of the above

⇒ Highest resistivity of the following is
nichrome
constantan
metal
manganin

⇒ Which of the following best represents the output impedance of an actual op-amp?
10 ohm
100 ohm
10 k ohm
100 k ohm

⇒

Match the following:

	List I (Types of memory)		List II (Used As)
A.	DRAM	1.	Cache memory
B.	SRAM	2.	Main memory
C.	Parallel Access Registers	3.	BIOS memory
D.	ROM	4.	CPU registers

A-1, B-4, C-2, D-3
A-3, B-4, C-2, D-1
A-1, B-2, C-4, D-3
A-3, B-2, C-4, D-1

⇒ If e = 10 sin(10⁸ t + 3 sin 10⁴ t) then the deviation is
4.77 kHz
47.7 kHz
477 kHz
4770 kHz

⇒ An end fire array consisting of several half-wave lengths of directive gain 40, then find the width of major lobe
60
50
51.25
None of the above

⇒ The density of the dynamic RAM is
more than that of static RAM
less than that of static RAM
equal to that to static RAM
equal to or more than that of static RAM

⇒ An RLC series circuit has R = 7.07 Ω, L = .707 H and C = 7.07 μF. At Half power frequencies the circuit impedance is likely to be
7.07 Ω
10 Ω
14.14 Ω
20 Ω

⇒ The maximum phase difference between the applied voltage and current in a RLC series current with finite values of R, L, C, and f can be
less than 90°
less than 45°
180°
30°

⇒ If 4 in binary system is 100 then 8 will be
10
100
111
1000

⇒

Assertion (A): In FM the frequency of the carrier is varied by the modulating voltage

Reason (R): FM and PM are two forms of angle modulation.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct but R is wrong
A is wrong but R is correct