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Q1. | For checking the parity of a digital word, it is preferable to use |

A. | AND gates [Wrong Answer] |

B. | NAND gates [Wrong Answer] |

C. | EX-OR gates [Correct Answer] |

D. | NOR gates [Wrong Answer] |

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Explanation:-
Answer : CDiscuss it below :!! OOPS Login [Click here] is required to post your answer/resultHelp other students, write article, leave your comments |

**Also Read Similar Questions Below :**

⇒ A single phase half wave rectifier circuit has a free wheeling diode. The free wheeling diode will conduct only if

load is purely resistive

load is purely inductive

load is combination of R and L

load is purely inductive or combination of R and L

⇒ To increase Q factor of a coil, the wire should be

long

thin

thick

long and thin

⇒ The hexadecimal number BBC7 is equivalent to decimal number

49761

46791

47691

49761

⇒ The device most likely to be found in an SSB transmitter is

class C audio amplifier

tuned modulator

class B RF amplifier

class A RF amplifier

⇒ At very low frequencies a series R-C circuit behaves as almost purely __________ .

resistive

inductive

capacitive

none of the above

⇒ As temperature increases

the forbidden energy gap in silicon and germanium increase

the forbidden energy gap in silicon and germanium decrease

the forbidden energy gap in silicon decreases while that in germanium decreases

the forbidden energy gap in silicon increases while that in germanium decreases

⇒ When Schrodinger equation is applied to the motion of electron in the field of protons, the physically acceptable solutions for the wave function exist for quantum number which are

2

3

4

5

⇒ A parametric amplifier uses

non linear resistance

non linear reactance

either (a) or (b)

neither (a) nor (b)

⇒ Which camera tube has gamma of almost unity?

Vidicon

Plumbicon

New vicon

Saticon

⇒ Consider the following statements: The function of oxide layer in an IC device is to

- mask against diffusion or non implant
- insulate the surface electrically
- increase the melting point of silicon
- produce a chemically stable protective layer

1, 2, 3 are correct

1, 3, 4 are correct

2, 3, 4 are correct

1, 2, 4 are correct

⇒ In a series operated thyristor configuration, each thyristor should support 100 V. However, the three thyristors only support voltage of 100 V, 90 V and 85 V respectively. Hence, the string efficiency in the case is :

0.9845

0.4584

0.9167

none of these

⇒ Narrow band FM signal can be represented as

A cos (2p

*f*) - β

_{c}t*A*sin (2p

*f*) sin (2p

_{c}t*f*)

_{m}tA cos (2p

*f*) - β

_{m}t*A*sin (2p

*f*) sin (2p

_{c}t*f*)

_{m}tA cos (2p

*f*) + β

_{c}t*A*sin (2p

*f*) sin (2p

_{c}t*f*)

_{m}tA cos (2p

*f*) + β

_{m}t*A*sin (2p

*f*) sin (2p

_{m}t*f*)

_{c}t⇒ In a radio receiver the input from local oscillator is fed to

RF amplifier

mixer

IF amplifier

detector

⇒ A broadside array consisting of 200 cm wavelength with 10 half-wave dipole spacing 10 cm. And if each array element feeding with 1 amp. current and operating at same frequency then find the half power beamwidth

4°

2°

10°

15°

⇒ An ammeter has a resistance of 50 ohms and a shunt of 0.01 Ω. The deflection is θ. If the shunt resistance is increased to 0.02 Ω, the deflection will be.

θ

2θ

0.5θ

0.25θ

⇒ In bridge circuit of figure, equivalent resistance between A and B

1 Ω

0.5 Ω

2 Ω

1.5 Ω

⇒ In log magnitude Bode diagram the slope of high frequency asymptote of (1 +

*j*ωT) is

20 dB per decade

10 dB per decade

20 dB per octave

10 dB per octave

⇒ Consider the following statements

- Usable bandwidth of ridge wave guide is more than that of rectangular waveguide.
- For a given value of TM
_{10}cutoff frequency the cross section of ridge wave guide is lesser that that of rect angular waveguide. - Ridge wave guide has higher conductor losser than a rectangular waveguide.
- Ridge guide has higher conductor losser than a rectangular waveguide.

1 and 2 only

1, 2 and 3 only

2 and 3 only

All

⇒ Energy content of atmospheric noise

does not depend on frequency

decreases as frequency is increased

increases as frequency is increased

either (a) or (c) depending on the temperature

⇒ Which one of the following is an indirect way of generating FM?

Armstrong modulator

Varactor diode modulator

Reactance FET modulator

Reactance bipolar transistor modulator

⇒ In figure if C is replaced by short circuit then R

_{B}wil

425 K

412 K

474 K

400 K

⇒ In figure, the power dissipated in 4 resistance is P

_{1}and power associated with 3 A source is P

_{2}.

P

_{1}= P

_{2}

P

_{1}< P

_{2}

P

_{1}> P

_{2}

P

_{1}may be equal or less than P

_{2}

⇒ In order to receive a vertical polarized wave, the conductor of the dipole should be mounted

horizontally

vertically

at an angle of 45°

at an angle of 90°

⇒ As compared to a

*p*-

*n*junction diode

a schottky diode has lower cut in voltage and lower reverse saturation current

a schottky diode has higher cut in voltage and higher reverse saturation current

a Schottky diode has lower cut in voltage and higher reverse saturation current

a schottky diode has higher cut in voltage and lower reverse saturation current

⇒ For the DAC in the given figure V

_{O10 V5 V4 V8 V}

⇒ In a microwave coaxial cable the inner conductor radius is

*a*and inner radius of outside conductor is

*b*. For TE

_{11}mode the cut off wavelength is about

*a*+

*b*

p(

*a*+

*b*)

p

*a*

p

*b*

⇒

`ALU 1C 74181`

can accept two words each having2 bits

4 bits

8 bits

16 bits

⇒ In figure the potential of gate termina

4 V

-4 V

0

20 V

⇒ If absolute potential of A is - 8 V and that of B is - 16 V, V

_{AB}is equal to

24 V

8 V

- 8 V

- 24 V

⇒ Boolean algebra obeys

commutative law

associative law

distributive law

commutative, associative and distributive law