Question is ⇒ For a series resonant circuit at low frequency circuit impedance is __________ and at high frequency circuit impedance is _______, Options are ⇒ (A) capacitive, inductive, (B) inductive, capacitive, (C) resistive, inductive, (D) capacitive, resistive, (E) , Leave your comments or Download question paper.

Question is ⇒ For a series resonant circuit at low frequency circuit impedance is __________ and at high frequency circuit impedance is _______, Options are ⇒ (A) capacitive, inductive, (B) inductive, capacitive, (C) resistive, inductive, (D) capacitive, resistive, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	For a series resonant circuit at low frequency circuit impedance is __________ and at high frequency circuit impedance is _______
A.	capacitive, inductive [Correct Answer]
B.	inductive, capacitive [Wrong Answer]
C.	resistive, inductive [Wrong Answer]
D.	capacitive, resistive [Wrong Answer]
View Answer 1 -2 Explanation:- Answer : A Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ Skin effect is more pronounced at high frequencies.
TRUE
FALSE

⇒ A uniform plane magnetic wave incident normally on a plane surface of a dielectric material is reflected and the percentage of reflected power is 75% What is VSWR?
14
1.4
15
13

⇒ In case of photo conductor for germanium when forbidden energy gap is 0.72 eV, the critical wavelength for intrinsic excitation will be
1.43 m
1.43 mm
1.73 mm
1.73 x 10¹² m

⇒ In 8085 microprocessor system, what will be the total delay provided by the following loop.3.154 msec
3.514 msec
2.644 msec
3.166 msec

⇒ The current I_CBO
increases with increases in temperature
is normally greater for silicon transistor than germanium transistors
mainly depends on the emitter base junction bias
depends largely on the emitter doping

⇒ Consider the following stateme
1, 2 and 3
1 and 2 only
2, 3 and 4
2, 3 and 4

⇒ NAND gates can be used to produce edge triggering.
TRUE
FALSE

⇒ RMS value of a square wave is the same as peak value.
TRUE
FALSE

⇒ Radar reciever has high sensitivity and low noise figure
TRUE
FALSE

⇒ For frequencies upto 1650 kHz __________ antenna is used
yagi
grounded
turnstile
marconi

⇒ Choose the correct option

Mesh is the smallest loop of circuit
Loop is smallest path of circuit
Loop does not contain any mesh
Loop may have one or more than one mesh

1, 2, 3, 4
3, 4, 2
1, 4
3, 2

⇒ The fetching, decoding and executing of an instruction is broken down into several time intervals. Each of these intervals, involving one or more clock periods, is called a
instruction cycle
machine cycle
process cycle
none of the above

⇒ Bellows converts
pressure difference into displacement
pressure difference into voltage
displacement into pressure difference
either (a) or (c)

⇒ The number of spectral component when two cosine waves are multiplied of different frequency
1
2
8
4

⇒ In figure, the position of voltmeter and ammeter are exchanged. It may result in damage
both the instruments
ammeter
voltmeter
neither of two

⇒ A boot strap generally incorporates
CB configuration
CE configuration
emitter follower
none of the above

⇒ The V-I characteristic of a semi-conductor diode is shown in figure. From this figure it can be concluded
The diode is a silicon diode
The diode is a germanium diode
Break down voltage of the diode is 0.7 V
At 1 V rated current will pass through the diode

⇒ A microwave junction is matched at all ports if the S matrix
has all diagonal elements zero
has all diagonal elements equal but not zero
has all diagonal elements complex
is Hermitian

⇒ In a pneumatic bellows
the input surface, output surface and side walls are corrugated
the input surface and output surface are flat but the side walls are corrugated
the input surface and side walls are flat but the output surface is corrugated
the input surface and output surface are corrugated but the side walls are flat

⇒ Satellite launch sites are invariably located on Eastern seaboards to ensure that
launch takes place eastward
expenditure of propulsion fuel is reduced during plane changing
the satellite achieves circular orbit quickly
spent rocket motor and other launcher debris falls into the sea

⇒ In the circuit, shown in figure, V₀ = V_i. The values of 1, m, n are: (x represents don't care conditi
0, 1, 1
∞, x, x
x, ∞, x
0, x, ∞

⇒ If sound intensity is 8 W/m², the dB level of this sound is about
5 dB
50 dB
129 dB
1290 dB

⇒ Which of the following best represents the input impedance of an actual op-amp?
10 ohm
1 k ohm
1 M ohm
100 M ohm

⇒ A 2 bit binary multiplier can be implemented using
2 inputs ANDs only
2 I/P XOR and 4 I/P AND gate only
two 2 inputs NORs and One XNOR gate
XOR gates and shift registers

⇒ An electron shell corresponding to principal quantum number n can contain a maximum of
n² electrons
2n² electrons
2n electron
n³ electron

⇒

Assertion (A): Structures are useful in DBMS.

Reason (R): Structures are very large numbers of applications besides DBMS.

Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is correct R is wrong
A is wrong R is correct

⇒ Consider the following statements as regards DPSK and DEPSK

DPSK demodulator requires a device which operates at carrier frequency and provides a delay of bit time T_b
In DPSK, synchronous demodulation recovers the signal b(t) and the decoding of b(t) to generate d(t) is done at base band
In both DPSK and DEPSK errors always occur in pairs

Which of the above statements are correct?
1 and 3
1 and 2
2 and 3
1, 2 and 3

⇒ A semiconductor Read-only-Memory basically is
a combinational logic circuit
a set of flip-flop memory elements
a sequential circuit with flip-flops and gates
none of the above

⇒ Is Schottky TTL, Schottky diode is used primary to
prevent saturation of the transistor
saturate the transistor
act as a switch
act as a controlling switch

⇒ A network N is dual of network N if
both of them have same mesh equation
both of them have same node equation
mesh equation of one are the node equations of the other
KCL and KVL equations are the same