Question is ⇒ For a MOS capacitor fabricated on a P-type semiconductor, strong inversion occurs when, Options are ⇒ (A) surface potential is equal to Fermi potential, (B) surface Potential is greater than Fermi potential, (C) surface potential is - ve and equal to Fermi potential in magnitude, (D) surface potential is + ve and equal to twice the Fermi potential, (E) , Leave your comments or Download question paper.

Question is ⇒ For a MOS capacitor fabricated on a P-type semiconductor, strong inversion occurs when, Options are ⇒ (A) surface potential is equal to Fermi potential, (B) surface Potential is greater than Fermi potential, (C) surface potential is - ve and equal to Fermi potential in magnitude, (D) surface potential is + ve and equal to twice the Fermi potential, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	For a MOS capacitor fabricated on a P-type semiconductor, strong inversion occurs when
A.	surface potential is equal to Fermi potential [Wrong Answer]
B.	surface Potential is greater than Fermi potential [Wrong Answer]
C.	surface potential is - ve and equal to Fermi potential in magnitude [Wrong Answer]
D.	surface potential is + ve and equal to twice the Fermi potential [Correct Answer]
View Answer 1 -2 Explanation:- Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

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