Question is ⇒ E<sub>G</sub> for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that, Options are ⇒ (A) more number of electron-hole pairs will be generated in silicon than in germanium at room temperature, (B) less number of electron hole pairs will be generated in silicon than in germanium at room temperature, (C) equal number of electron-hole pairs will be generated in both at lower temperatures, (D) equal number of electron-hole pairs will be generated in both at higher temperatures, (E) , Leave your comments or Download question paper.

Question is ⇒ E<sub>G</sub> for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that, Options are ⇒ (A) more number of electron-hole pairs will be generated in silicon than in germanium at room temperature, (B) less number of electron hole pairs will be generated in silicon than in germanium at room temperature, (C) equal number of electron-hole pairs will be generated in both at lower temperatures, (D) equal number of electron-hole pairs will be generated in both at higher temperatures, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	E_G for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore it can be concluded that
A.	more number of electron-hole pairs will be generated in silicon than in germanium at room temperature [Wrong Answer]
B.	less number of electron hole pairs will be generated in silicon than in germanium at room temperature [Correct Answer]
C.	equal number of electron-hole pairs will be generated in both at lower temperatures [Wrong Answer]
D.	equal number of electron-hole pairs will be generated in both at higher temperatures [Wrong Answer]
View Answer 1 -1 Explanation:- Answer : B Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

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