Question is ⇒ At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is, Options are ⇒ (A) 450 cm2/V-s, (B) 1350 cm2/V-s, (C) 1800 cm2/V-s, (D) 3600 cm2/V-s, (E) , Leave your comments or Download question paper.

Question is ⇒ At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is, Options are ⇒ (A) 450 cm2/V-s, (B) 1350 cm2/V-s, (C) 1800 cm2/V-s, (D) 3600 cm2/V-s, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	At room temperature, a possible value for the mobility of electrons in the inversion layer of a silicon n-channel MOSFET is
A.	450 cm²/V-s [Wrong Answer]
B.	1350 cm²/V-s [Correct Answer]
C.	1800 cm²/V-s [Wrong Answer]
D.	3600 cm²/V-s [Wrong Answer]
View Answer 2 -2 Explanation:- Answer : B Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

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