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At a very low temperature, a semiconductor | |
A. | becomes a conductor [Wrong Answer] |
B. | becomes an insulator [Correct Answer] |
C. | may become a conductor or an insulator [Wrong Answer] |
D. | will remain a semiconductor becomes a conductor or an insulator [Wrong Answer] |
View Answer
Explanation:-
Answer : B Discuss it below : !! OOPS Login [Click here] is required to post your answer/result |
Also Read Similar Questions Below :
⇒ High intermediate frequency in a superheterodyne receiver
higher than
lower than
equal to
not comparable to
⇒ E_{G} for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore, it can be concluded that
the conductivity of silicon will be less than that of germanium at room temperature
the conductivity of silicon will be more than that of germanium at room temperature
the conductivity of two will be same at 60°C
the conductivity of two will be same at 100°C
⇒ In a klystron amplifier the transit time of electron passing the gap in the cavity should be
less than one cycle
less than half cycle
less than quarter cycle
more than quarter cycle
⇒ The forms of IF statements in FORTRAN 77 are called
logical IF and Block IF
logical IF, block IF and arithmetic IF
logic IF, block IF, arithmetic IF and negate IF
logical IF and arithmetic IF
⇒ The maximum effective aperture of λ/2 (half-wave) antenna is
0.013 λ^{2}
0.13 λ^{2}
1.3 λ^{2}
13 λ^{2}
⇒ An arithmetic statement in C must be
integer mode arithmetic statement
real mode arithmetic statement
mixed mode arithmetic statement
any of the above
⇒ The op-amp used in nonlinear mode is
integrators
active filters
Schmitt triggers
instrumentation amplifiers
⇒ RMS value is always higher than average value.
TRUE
FALSE
⇒ A series resonant circuit has parameters 10 ω, 1 H and 0.1 F. It is excited by a voltage v = 100 sin ωt. At resonant frequency, the power dissipated in the circuit is
1000 W
707 W
500 W
414.14 W
⇒
Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is true, R is false
A is false, R is true
⇒ Which of the following cannot be used to demodulate SSB?
Complete phase-shift generator
Product detector
Diode balanced modulator
Bipolar transistor balanced modulator
⇒ In a tape recorder the output from RF oscillator is given to
only erase head coil
only record head coil
coils of both erase head and record head
none of the above
⇒ A junction Field Effect Transistor can operate in
depletion mode only
enhancement mode only
depletion and enhancement modes
neither depletion nor enhancement modes
⇒ Narrowband FM signal can be considered to be equal to
PM
AM
SSB
DSB
⇒ The circuit in figur
CE amplifier
CB amplifier
Constant voltage source
Constant current source
⇒ Which of the following is a vector quantity?
Standing wave ratio
Reflection coefficient
Gain
All of the above
⇒ In a communication system, a process in which statistical averages and time averages are equal is called as,
stationary
ergodic
Gaussian
BIBO stable
⇒ In an home T.V. receiver, the leed in from the antenna is
coaxial cable of 75 Ω
ordinary twisted wire
bar copper wire
twin wire
⇒ In a colour TV receiver, AGC adjusts the gain of
RF stage only
IF stage only
RF stage and one or two IF stages
none of the above
⇒ The dielectrics having only one kind of atoms are known as elemental dielectrics.
TRUE
FALSE
⇒ In the circuit shown in figure, I_{s} = 4A, V_{s} = 4, the voltage V is give
6 V
8 V
4 V
2 V
⇒ The relation between thermionic emission current and temperature is known as
Richardson Dushman equation
Langmuir child law
Ohm's law
Boltzmann's law
⇒ At a particular time it is observed that the frequencies of F layer at Delhi is 3 MHz the maximum electron density is
11 x 10^{10}
1.1 x 10^{10}
0.11 x 10^{10}
11 x 10^{12}
⇒ The number of counter states which an 8 bit stair step A/D converter has to pass through before conversion takes place is equal to
1
8
255
256
⇒ If f_{h}(t) is Hilbert transform of f(t), then Hilbert transform of f_{h}(t) is
-f(t)
+f(t)
f^{2}(t)
f(t)
⇒ Which circuit has its output signal from, the emitter?
Common base
Common emitter
Emitter follower
None of the above
⇒ In a digital system there are three inputs ABC. Output should be high when atleast two inputs are high. Then output =
AB + BC + AC
ABC + ABC + A BC + ABC
AB + BC + AC
AB + BC + AC
⇒ Which of the following is a microwave source with a 'cross-field' structure?
Double cavity klystron
Reflex klystron
Magnetron
Travelling wave tube
⇒ The unit of thermal resistance of a semi-conductor device is
Ohms
Ohms/°C
°C/ohm
°C/watt
⇒ The drain characteristics of JFET are drawn between
V_{GS} and V_{DS} for different values of drain current
drain current and V_{GS} for different values of V_{DS}
drain current and V_{DS} for different values of V_{GS}
drain current and V_{GS }for one value of V_{DS}
⇒ High intermediate frequency in a superheterodyne receiver
higher than
lower than
equal to
not comparable to
⇒ E_{G} for silicon is 1.12 eV and that for germanium is 0.72 eV. Therefore, it can be concluded that
the conductivity of silicon will be less than that of germanium at room temperature
the conductivity of silicon will be more than that of germanium at room temperature
the conductivity of two will be same at 60°C
the conductivity of two will be same at 100°C
⇒ In a klystron amplifier the transit time of electron passing the gap in the cavity should be
less than one cycle
less than half cycle
less than quarter cycle
more than quarter cycle
⇒ The forms of IF statements in FORTRAN 77 are called
logical IF and Block IF
logical IF, block IF and arithmetic IF
logic IF, block IF, arithmetic IF and negate IF
logical IF and arithmetic IF
⇒ The maximum effective aperture of λ/2 (half-wave) antenna is
0.013 λ^{2}
0.13 λ^{2}
1.3 λ^{2}
13 λ^{2}
⇒ An arithmetic statement in C must be
integer mode arithmetic statement
real mode arithmetic statement
mixed mode arithmetic statement
any of the above
⇒ The op-amp used in nonlinear mode is
integrators
active filters
Schmitt triggers
instrumentation amplifiers
⇒ RMS value is always higher than average value.
TRUE
FALSE
⇒ A series resonant circuit has parameters 10 ω, 1 H and 0.1 F. It is excited by a voltage v = 100 sin ωt. At resonant frequency, the power dissipated in the circuit is
1000 W
707 W
500 W
414.14 W
⇒
Assertion (A): CMOS devices have very low power consumption
Reason (R): CMOS devices have high noise margin.
Both A and R are correct and R is correct explanation of A
Both A and R are correct but R is not correct explanation of A
A is true, R is false
A is false, R is true
⇒ Which of the following cannot be used to demodulate SSB?
Complete phase-shift generator
Product detector
Diode balanced modulator
Bipolar transistor balanced modulator
⇒ In a tape recorder the output from RF oscillator is given to
only erase head coil
only record head coil
coils of both erase head and record head
none of the above
⇒ A junction Field Effect Transistor can operate in
depletion mode only
enhancement mode only
depletion and enhancement modes
neither depletion nor enhancement modes
⇒ Narrowband FM signal can be considered to be equal to
PM
AM
SSB
DSB
⇒ The circuit in figur
CE amplifier
CB amplifier
Constant voltage source
Constant current source
⇒ Which of the following is a vector quantity?
Standing wave ratio
Reflection coefficient
Gain
All of the above
⇒ In a communication system, a process in which statistical averages and time averages are equal is called as,
stationary
ergodic
Gaussian
BIBO stable
⇒ In an home T.V. receiver, the leed in from the antenna is
coaxial cable of 75 Ω
ordinary twisted wire
bar copper wire
twin wire
⇒ In a colour TV receiver, AGC adjusts the gain of
RF stage only
IF stage only
RF stage and one or two IF stages
none of the above
⇒ The dielectrics having only one kind of atoms are known as elemental dielectrics.
TRUE
FALSE
⇒ In the circuit shown in figure, I_{s} = 4A, V_{s} = 4, the voltage V is give
6 V
8 V
4 V
2 V
⇒ The relation between thermionic emission current and temperature is known as
Richardson Dushman equation
Langmuir child law
Ohm's law
Boltzmann's law
⇒ At a particular time it is observed that the frequencies of F layer at Delhi is 3 MHz the maximum electron density is
11 x 10^{10}
1.1 x 10^{10}
0.11 x 10^{10}
11 x 10^{12}
⇒ The number of counter states which an 8 bit stair step A/D converter has to pass through before conversion takes place is equal to
1
8
255
256
⇒ If f_{h}(t) is Hilbert transform of f(t), then Hilbert transform of f_{h}(t) is
-f(t)
+f(t)
f^{2}(t)
f(t)
⇒ Which circuit has its output signal from, the emitter?
Common base
Common emitter
Emitter follower
None of the above
⇒ In a digital system there are three inputs ABC. Output should be high when atleast two inputs are high. Then output =
AB + BC + AC
ABC + ABC + A BC + ABC
AB + BC + AC
AB + BC + AC
⇒ Which of the following is a microwave source with a 'cross-field' structure?
Double cavity klystron
Reflex klystron
Magnetron
Travelling wave tube
⇒ The unit of thermal resistance of a semi-conductor device is
Ohms
Ohms/°C
°C/ohm
°C/watt
⇒ The drain characteristics of JFET are drawn between
V_{GS} and V_{DS} for different values of drain current
drain current and V_{GS} for different values of V_{DS}
drain current and V_{DS} for different values of V_{GS}
drain current and V_{GS }for one value of V_{DS}