Question is ⇒ A silicon wafer has 100 nm of oxide it and is inserted in a furnace at a temperature above 1000°C for further oxidation in dry oxygen. The oxidation rate, Options are ⇒ (A) is independent of current oxide thickness and temperature, (B) is independent of current oxide thickness but depends on temperature, (C) slows down as the oxide grows, (D) is zero as the existing oxide prevents further oxidation, (E) , Leave your comments or Download question paper.

Question is ⇒ A silicon wafer has 100 nm of oxide it and is inserted in a furnace at a temperature above 1000°C for further oxidation in dry oxygen. The oxidation rate, Options are ⇒ (A) is independent of current oxide thickness and temperature, (B) is independent of current oxide thickness but depends on temperature, (C) slows down as the oxide grows, (D) is zero as the existing oxide prevents further oxidation, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	A silicon wafer has 100 nm of oxide it and is inserted in a furnace at a temperature above 1000°C for further oxidation in dry oxygen. The oxidation rate
A.	is independent of current oxide thickness and temperature [Wrong Answer]
B.	is independent of current oxide thickness but depends on temperature [Wrong Answer]
C.	slows down as the oxide grows [Wrong Answer]
D.	is zero as the existing oxide prevents further oxidation [Correct Answer]
View Answer 2 -2 Explanation:- Answer : D Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

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