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Q1. | A series RLC circuit is supplied from a variable frequency source. The resonant frequency is ω_{0}. The voltage across L is maximum at a frequency |

A. | equal to ω_{0} [Wrong Answer] |

B. | slightly less than ω_{0} [Wrong Answer] |

C. | slightly more than ω_{0} [Correct Answer] |

D. | none of the above [Wrong Answer] |

View Answer
Explanation:-
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**Also Read Similar Questions Below :**

⇒

Match the following:

List I | List II | ||
---|---|---|---|

A. | p type semiconductor | 1. | silicon |

B. | n type semiconductor | 2. | holes are majority carriers |

C. | Intrinsic semiconductor | 3. | electrons are majority carriers |

D. | Tungsten | 4. | is a metal |

A-2, B-3, C-1, D-4

A-1, B-2, C-3, D-4

A-4, B-3, C-2, D-1

A-3, B-1, C-2, D-4

⇒ The temperature below which certain materials are antiferromagnetic and above which they are paramagnetic is called

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Curie temperature

Neel temperature

None of the above

⇒ Bandwidth will be

*a*.

*b*

*a*+

*b*

*a*

*b*

⇒ Consider the equation

*s*

^{2}+ 2

*s*+ 2 + K(

*s*+ 2) = 0. Where do the roots of this equation break on the root loci plot?

-3.414

-2.414

-1.414

-0.414

⇒ Padders are used in a receiver to

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filter the input signal

suppress noise

⇒ In a differential amplifier, CMRR can be improved by using an increased

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power supply voltages

source resistance

⇒ The equivalent inductance measured between the terminals 1 and 2 for the circuit shown in the figur

L

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L

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L

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L

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⇒ In figure, the transmission parameters are A = C = 1, B = 2 and D = 3. Then Z

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⇒ Figure represen

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Zener diode

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⇒ The reverse saturation current in a semiconductor diode consists of

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zener current

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⇒ Which of the following has highest conductivity?

Silver

Aluminium

Tungsten

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⇒

**Assertion (A):** When V_{DS} is more than rated value the drain current in a JFET is very high.

**Reason (R):** When V_{DS} is more than rated value, avalanche breakdown occurs.

Both A and R are true and R is correct explanation of A

Both A and R are true but R is not a correct explanation of A

A is true but R is false

A is false but R is true

⇒ The decimal equivalent of binary 1101.11 is

9.75

13.75

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11.75

⇒

**Assertion (A):** In a circuit using FET, gate is approximately at dc ground

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Both A and R are correct and R is correct explanation for A

Both A and R are correct but R is not correct explanation for A

A is correct R is wrong

A is wrong R is correct

⇒ The three sides of an admittance triangle denote

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⇒ The primary reason for the widespread use of Si in semiconductor device technology is

abundance of Si on the surface of earth

larger band gap of Si in comparison to Ge

favourable properties of Silicon-dioxide (SiO

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⇒ Good frequency stability can be available

crystal oscillators

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colpitts oscillators

none of the above

⇒ As compared to a BJT amplifier circuit, a JFET amplifier circuit

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⇒ When the ac base voltage in a CE amplifier circuit is too high, the ac emitter current is

zero

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⇒ A radio frequency choke permits an easy flow of __________ current and at the same time it offers a very impedance to __________ currents.

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⇒ A 10 bit ADC with a full scale output voltage of 10.24 V is to be designed to have ± LSB/2 accuracy. If ADC is calibrated at 25°C, the maximum net temperature coefficient of ADC should not exceed

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⇒ An antenna having a high Q has

lower BW

higher BW

flat response

none of the above

⇒ An input voltage V(

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*V*is applied to a series combination of resistance R = 1 kΩ inductance L = 1H. The resulting steady-state current

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⇒ The impulse response of the DT - LTI system is given be

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TRUE

FALSE

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TRUE

FALSE

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*g*(

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_{g}(ω) and P

_{g}, the PSD and the power of signal

*a*.

*g*(

*t*) are respectively

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^{2}

_{g}(ω) and

*a*

^{2}P

_{g}

*a*S

_{g}

^{2}(ω) and

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_{g}

*a*S

_{g}(ω) and

*a*

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_{g}

*a*S

_{g}(ω) and

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