Users Also Read

MCQ's Search Engine

Electrical Engineering

Mechanical Engineering

Civil Engineering

Automobile Engineering

Chemical Engineering

Computer Engineering

Electronics Engineering

Medical Science Engg

Q1. | A peak responding ac voltmeter using a half wave rectifier has been calibrated to read 1 V for 1 V rms sine wave input. If input is 1 V dc the reading will be |

A. | 0.707 V [Wrong Answer] |

B. | 0.707 or 0 V [Correct Answer] |

C. | 1.414 V [Wrong Answer] |

D. | 1.414 or 0 V [Wrong Answer] |

View Answer
Explanation:-
Answer : BDiscuss it below :!! OOPS Login [Click here] is required to post your answer/resultHelp other students, write article, leave your comments |

**Also Read Similar Questions Below :**

⇒ The contents of the program counter after the call operation wil

(30F0)

_{H}

(40F0)

_{H}

(50F0)

_{H}

(60F0)

_{H}

⇒ In figure V is ideal voltmeter having infinite resistance. It will read __________ v

40

60

0

100

⇒ In a single phase full wave ac regulator, the firing angles in the two half cycles

are always equal

are sometimes equal

are never equal

may be equal or unequal

⇒ A signal is

*x*+

*f*(

*t*) where

*x*is constant and

*f*(

*t*) is a power signal with zero mean value. The power of the signal is

*x*

^{2}

*x*

^{2}+

*f*

^{2}(

*t*)

more than

*x*

^{2}+

*f*

^{2}(

*t*)

less than

*x*

^{2}+

*f*

^{2}(

*t*)

⇒ The number of doped regions in a SCR is

2

3

4

5

⇒ In a CE amplifier the dc load line is the same as ac load line when

ac collector resistance and dc collector resistance are equal

ac collector resistance and dc emitter resistance are equal

ac collector resistance is very high

ac collector resistance is one half of dc collector resistance

⇒ A sine wave is passed through an amplifier which severely limits it symmetrically. If then passes to a second amplifier which is narrow band and tuned to the frequency of the original sine wave. What will be the output wave from this second amplifier?

A square wave of the same frequency as that of the original sine wave

A square wave of double the frequency of that of original sine wave

A sine wave of constant amplitude at the frequency of the original sine wave

A sine wave of constant amplitude at double frequency of the original sine wave

⇒ In fabricating silicon BJT in ICs by the epitaxial process, the number of diffusions used is usually

2

3

4

6

⇒ The question below consists of a pair of related words followed by four pairs of words. Select the pair that best expresses the relation in the original p

fallow : land

unaware : sleeper

wit : jester

renovated : house

⇒ The first critical frequency nearest the origin of the complex frequency plane for an RL driving point impedance will be

a zero in left half plane

a zero in right half plane

a pole in left half plane

a pole or zero in left half plane

⇒ Consider the following statements

- The amplitude of an FM wave is constant
- FM is more immune to noise than AM
- FM broadcasts operate in upper VHF and UHF frequency ranges
- FM transmitting and receiving equipments are simpler as compared to AM transmitting and receiving equipments

1, 2, 3, 4

1, 2, 3

2, 3, 4

1, 3, 4

⇒ In a radio receiver, the local oscillator is always tuned to a frequency higher than the incoming frequency to

facilitate tracking

allow permit adequate frequency coverage without switching

facilitate image frequency rejection

all of the above

⇒ In a 4 bit weighted resistor D/A converter, the resistor value corresponding to LSB is 32 kΩ. The resistor value corresponding to MSB will be

32 KΩ

16 KΩ

8 KΩ

4 KΩ

⇒ Consider the following operation in respect of Wheatstone bridge (K

_{b}, denotes battery key, K

_{g}denotes galvanometer key)

- open K
_{b} - close K
_{g} - close K
_{b} - open K
_{g}

1, 2, 3, 4

3, 1, 2, 4

4, 3, 2, 1

3, 2, 4, 1

⇒ The noise sources shot noise, partition noise and thermal noise are associated with which component

BJT

diode

resistor

capacitor

⇒ Consider the following statements:

- With increase in temperature Fermi-level tries to come in between the energy gap exactly at middle
- Mobility of electron in GaAs is very high compared to mobility of hole
- In LED, the light energy radiated due to recombination with the aid of traps.

1 and 2

1, 2 and 3

2 and 3

1 and 3

⇒ ABCD + AB C D =

ABC

ABCD

A B D

ABCD

⇒ The Boolean function realized by the logic circuit show

F = Σ

*m*(0, 1, 3, 5, 9, 10, 14)

F = Σ

*m*(2, 3, 5, 7, 8, 12, 13)

F = Σ

*m*(1, 2, 4, 5, 11, 14, 15)

F = Σ

*m*(2, 3, 5, 7, 8, 9, 12)

⇒ The 8086 arithmetic instruction work on

- signed and unsigned numbers
- ASCII data
- unpacked BCD data

1 and 2

1 and 3

2 and 3

1, 2 and 3

⇒

Match the following:

List I | List II | ||
---|---|---|---|

A. | Zener diode | 1. | used in seven segment display |

B. | Tunnel diode | 2. | used in voltage regulator circuits |

C. | LED | 3. | used is solar energy utilization |

D. | Photovoltaic cell | 4. | used in digital circuits |

A-1, B-3, C-2, D-4

A-2, B-3, C-1, D-4

A-2, B-4, C-1, D-3

A-3, B-2, C-4, D-1

⇒ The series element for a prototype high pass filter is

resistive

inductive

capacitive

combination of L and C

⇒ The inverse Fourier transform of δ(

*t*) is

∪(

*t*)

1

δ(

*t*)

*e*

^{j2pt}

⇒ For a second order system, damping ratio ζ is such that 0 < ζ <. Then the roots of characteristic equation are

real but not equal

real and equal

complex conjugate

imaginary

⇒ For a BJT if β = 50, I

_{CEO}= 3 μA and I

_{C}= 1.2 mA then I

_{B}

24 μA

23 μA

20 μA

10 μA

⇒ The quantum numbers associated with electron motion are designed as

*a, b, c*

*h, k, l*

*n, m, l*

*h, n, l*

⇒ In a NAND SR latch S = R = 1. Then

Q = 1, Q = 0

Q = 0, Q = 1

both Q and Q will be same as before

the latch will be set

⇒ In a modem digital computer, a subtractor in normally not used because

subtractors are very expensive

the design of a subtractor is very complex

the adder is geared for doing subtraction

most of the programs do not require subtraction

⇒ The velocity factor of a transmission line

mainly depends on the skin effect

is always higher for a solid dielectric than for air

mainly depends on the dielectric constant of the material used

increases the velocity along the transmission line

⇒ V-I relationship of a network N is given by, V = 8 -

0, 2

0, 4

2, 4

None of these

⇒ A TEM wave incident obliquely on a dielectric boundary with ε

_{r1}= 2 and ε

_{r2}= 1, the angle of incidence for total reflection is

30°

60°

45°

90°