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A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10^{-8} [ε_{r} = 3.9; ε_{0} = 8.85 x 10^{-14} F/cm, q = 1.6 x 10^{-19} c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ . | |
A. | 8.6 x 10^{11}/cm^{2}, p-type [Correct Answer] |
B. | 8.6 x 10^{11}/cm^{2}, n-type [Wrong Answer] |
C. | 0.86 x 10^{9}/cm^{2}, p-type [Wrong Answer] |
D. | 1.02 x 10^{12}/cm^{2}, n-type [Wrong Answer] |
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Explanation:-
Answer : A Discuss it below : !! OOPS Login [Click here] is required to post your answer/result |
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