Question is ⇒ A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [εr = 3.9; ε0 = 8.85 x 10-14 F/cm, q = 1.6 x 10-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ ., Options are ⇒ (A) 8.6 x 1011/cm2, p-type, (B) 8.6 x 1011/cm2, n-type, (C) 0.86 x 109/cm2, p-type, (D) 1.02 x 1012/cm2, n-type, (E) , Leave your comments or Download question paper.

Question is ⇒ A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10-8 [εr = 3.9; ε0 = 8.85 x 10-14 F/cm, q = 1.6 x 10-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ ., Options are ⇒ (A) 8.6 x 1011/cm2, p-type, (B) 8.6 x 1011/cm2, n-type, (C) 0.86 x 109/cm2, p-type, (D) 1.02 x 1012/cm2, n-type, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	A MOSFET has a threshold voltage of 1 V and oxide thickness of 500 x 10^-8 [ε_r = 3.9; ε₀ = 8.85 x 10^-14 F/cm, q = 1.6 x 10^-19 c]. The region under the gate is ion implanted for threshold voltage tailoring. The base and type of impant required to shift threshold voltage to - 1 V are __________ .
A.	8.6 x 10¹¹/cm², p-type [Correct Answer]
B.	8.6 x 10¹¹/cm², n-type [Wrong Answer]
C.	0.86 x 10⁹/cm², p-type [Wrong Answer]
D.	1.02 x 10¹²/cm², n-type [Wrong Answer]
View Answer 1 -1 Explanation:- Answer : A Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

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