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Q1. | A capacitor with initial charge q_{0} at t = 0^{+} acts as |

A. | current source [Wrong Answer] |

B. | voltage source [Wrong Answer] |

C. | short-circuit [Correct Answer] |

D. | open-circuit [Wrong Answer] |

View Answer
Explanation:-
Answer : CDiscuss it below :!! OOPS Login [Click here] is required to post your answer/resultHelp other students, write article, leave your comments |

**Also Read Similar Questions Below :**

⇒

Match the following:

List I | List II | ||
---|---|---|---|

A. | Poles and zeros of lie an real axis driving point LC network | 1. | lie an real axis |

B. | Canonic LC network has | 2. | a zero |

C. | The number of Canonic networks for the given driving point function | 3. | minimum number of elements |

D. | The first critical frequency nearest the origin for RL driving point impedance | 4. | four |

5. | minimum number of elements | ||

6. | alternate | ||

7. | either a pole or zero | ||

8. | three |

A-1, B-5, C-8, D-7

A-6, B-5, C-3, D-2

A-1, B-5, C-4, D-2

A-1, B-3, C-4, D-7

⇒ The circuit consisting of two transistor connected in series with the d.c. supply voltage is called

push pull

differential pair

stacked V

^{+}

complementary symmetry

⇒ When a plane wave is incident normally from dielectric '1' (μ

_{0}, ε

_{1}) onto dielectric '2' (μ

_{0}, ε

_{2}) the electric field of the transmitted wave is 2 times the electric field of the reflected wave. The ratio ε

_{2}/ε

_{1}is

0.5

1

2

4

⇒ In a loss line R

_{L}< Z

_{0}, then

Reflection coefficient is zero

Reflection coefficient is ∞

Reflection coefficient is negative

Reflection coefficient is positive

⇒ Which power amplifier can deliver maximum load power?

Class A

Class AB

Class B

Class C

⇒ Compared to bipolar junction transistor, a JFET has

lower input impedance

high input impedance and high voltage gain

higher voltage gain

high input impedance and low voltage gain

⇒ Which of the following statement regarding single-sideband (SSB) transmission is not correct?

In such transmission only or sideband is transmitted, leaving of the other sideband and the carrier

It has gained general acceptance of use in home-entertainment equipment

It is generally reserved for point-to-point communication

The amount of power and bandwidth necessary to be transmitted for a given amount of information are appreciable reduced

⇒ Consider the following statements for a driving point function F(

*j*ω):

- Re F(
*j*ω) is an even function of ω and is 0 or positive for all values of ω. - Im F(
*j*ω) is an even function of ω and is 0 or positive for all values of ω. - Re F(
*j*ω) is an odd function of ω and is 0 or negative for all values of ω. - Re F(
*s*) = 0 for Re*s*= 0.

1 only

1 and 4

2, 2 and 4

4 only

⇒ UHF range is

30 MHz to 300 MHz

300 MHz to 3000 MHz

3000 MHz to 30, 000 MHz

above 30, 000 MHz

⇒ Transfer functions of even complicated components can be found by frequency response tests.

TRUE

FALSE

⇒ Assuming that flip-flops are in reset condition initially, the count sequence observed at Q

_{A}in the circuit show

0010111...

0001011...

0101111...

0110100...

⇒ In figure, E = 1 V (rms value). The average power is 250 mW. Then phase angle between E and

90°

60°

45°

30°

⇒ The language PL / I has

one character set having 60 characters

one character set having 48 characters

one character set having 60 characters and another character set having 48 character

none of the above

⇒ Thermal runaway is not possible in FET, because as the temperature of FET increases.

the mobility decreases

the transconductance increases

impedance of the source

power dissipation in the chip

⇒ If a = 0.995, I

_{E}= 10 mA, I

_{CO}= 0.5 mA, then I

_{CEO}will be

100 μA

25 μA

10.1 μA

10.5 μA

⇒

Match the following:

List I | List II | ||
---|---|---|---|

A. | Silicon | 1. | Donor Impurity |

B. | Antimony | 2. | Acceptor Impurity |

C. | Gallium | 3. | Most Commonly used semiconductor material |

D. | Germanium | 4. | Atomic number 32 |

A-3, B-1, C-2, D-4

A-2, B-3, C-1, D-4

A-1, B-2, C-3, D-4

A-4, B-3, C-2, D-1

⇒ A series resonant circuit is fed by a voltage having rms value V. At resonance, the voltage across inductance V

_{L}and voltage across capacitance V

_{C}are related as

V

_{L}> V

_{C}

V

_{L}< V

_{C}

V

_{L}= V

_{C}

V

_{L}= 0.5 V

_{C}

⇒ Which of the following constitute the loss resistance of an antenna?

Dielectric loss

Leakage loss in insulation

Loss in earth connections

All of the above

⇒ The time constant of a series RL circuit is

LR

L/R

R/L

*e*

^{-R/L}

⇒ Which of the following directives in 8085 causes two bytes to be reserved in the memory?

D S

D B

D W

E Q U

⇒ Let

*f*(A, B) = A ⊕ B; then the simplified form of the function

*f*(

*f*(

*x*⊕

*y*,

*z*)

*w*) is

(

*x*⊕

*y*⊕

*z*)

*w*

*x*⊕

*y*⊕

*z*⊕

*w*

(

*x*⊕

*y*⊕

*z*) +

*w*

none of these

⇒ Frequencies in the UHF range propagate by means of

space wave

surface waves

sky waves

ground waves

⇒ If V

_{a0}, V

_{a1}, V

_{a2}are sequence components of V

_{a}and I

_{a0}, I

_{a1}, I

_{a2}are sequence components of I

_{a}, then total 3 phase power P is given by

P = V

_{a0}I

_{a0}+ V

_{a1}I

_{a1}+ V

_{a2}I

_{a2}

P = V

_{a0}I

_{a0}+ V

_{a1}I

_{a1}+ V

_{a2}I

_{a2}

^{*}

P = 3(V

_{a0}I

_{a0}+ V

_{a1}I

_{a1}+ V

_{a2}I

_{a2})

P = 3(V

_{a0}I

_{a0}+ V

_{a1}I

_{a1}+ V

_{a2}I

_{a2}

^{*})

⇒ The relative permeability of an iron specimen is 400 when B = 0.2 T. If B = 0.4 T, μ

_{r}will be

400

less than 400

more than 400

more or less than 400

⇒ Which of the following is anti-ferromagnetic material?

CrSb

NIO

MnO

All of the above

⇒ Electrical contact materials used in switches, brushes, relay must possess

high thermal conductivity and high melting point

low thermal conductivity and low melting point

high thermal conductivity and low melting point

low thermal conductivity and high melting point

⇒ The length of half-wave antenna is at 30 MHz

2.5 meter

5 meter

10 meter

100 meter

⇒ Consider the resonant circuit as shown b

R = 10

^{4}L = 5 μH C = 20 pF

1000 L = 50 μH C = 200 pF

10 K L = 50 μH C =20 pF

None of these

⇒ Dielectric strength of which of the following material has the highest dielectric strength?

Porcelain

Soft rubber

Glass

Joule effect

⇒ Higher order active filters are used for variable

bandwidth

gain in the pass band

impedance

roll off rate