Question is ⇒ 11012 - 10012 =, Options are ⇒ (A) 1000, (B) 100, (C) 10, (D) 1, (E) , Leave your comments or Download question paper.

Question is ⇒ 11012 - 10012 =, Options are ⇒ (A) 1000, (B) 100, (C) 10, (D) 1, (E) , Leave your comments or Download question paper. Previous question Next question


Q1.	1101₂ - 1001₂ =
A.	1000 [Wrong Answer]
B.	100 [Correct Answer]
C.	10 [Wrong Answer]
D.	1 [Wrong Answer]
View Answer 1 -1 Explanation:- Answer : B Discuss it below : !! OOPS Login [Click here] is required to post your answer/result Help other students, write article, leave your comments

Previous question Next question

Also Read Similar Questions Below :

⇒ For the discrete time system of the given fig
y_k - 0.5 y_k_{- 1} - 0.25 y_k_{- 2} = u_k
y_k + 0.5 y_k_{- 1} - 0.25 y_k_{- 2} = u_k
y_k - 0.5 y_k_{- 1} + 0.25 y_k_{- 2} = u_k
y_k + 0.5 y_k_{- 1} + 0.25 y_k_{- 2} = u_k

⇒ If air pressure in a rectangular waveguide is increased the maximum power handling capacity
is decreased
is increased
remains the same
may increase or decrease depending on pressure

⇒ In cell communication, cell stands for
Geographical Area
Battery
Location
No meaning

⇒ A step voltage E is applied to an R-L series circuit. At t = 0, the current in the circuit is
E/R
E/L
infinity
zero

⇒ What is the decimal equivalent of the binary number shown in fourth row?
79
97
117
127

⇒

Assertion (A): Silicon is preferred over germanium in manufacture of semiconductor devices.

Reason (R): Forbidden gap in silicon is more than that in germanium.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true

⇒ What is output 'Z' of an EX-OR gate, whose all inputs are set at A?
Z = A
Z = 1
Z = 0
Z = A

⇒ A 1 mA meter is to be converted to 1 A ammeter. The meter resistance is 100 Ω. The value of shunt resistance is
0.001 Ω
0.1001 Ω
100 Ω
1000 Ω

⇒ A Q meter uses the principle of
variation of self inductance
variation of mutual inductance
series resonance
none of the above

⇒ Nichols chart consists of M and N locii in log magnitude versus phase diagram.
TRUE
FALSE

⇒ Which of the following does not show non-linear V-I characteristics?
Schottky diode
Tunnel diode
Thermister, at a fixed temperature
p-n junction diode

⇒ Figure given below shows the internal schematic of a TTL AND-OR Invert (AOI) gate, For the input shown in the given figure, the output
0
1
AB
AB

⇒ Consider the following stateme
2 and 4
1 and 2
1 only
3 and 4

⇒ FM broadcast lies in which band?
HF
SHF
UHF
VHF

⇒ The normal operation of JFET is
constant voltage region
constant current region
both constant voltage and constant current regions
either constant voltage or constant current region

⇒ In order to achieve accuracy, the slide wire of a potentiometer should be
as long as possible
as short as possible
neither too long nor too short
very thin

⇒ Giga watt is equal to
10¹² W
10⁹ W
10⁶ W
10³ W

⇒ In FM, the frequency deviation is
always constant
directly proportional to modulating frequency
inversely proportional to modulating frequency
proportional to amplitude of modulating signal

⇒ A stationary process has
all statistical properties independent of time
all statistical properties dependent of time
zero variance
ensemble average equal to time average

⇒ Which of the following has highest conductivity?
Silver
Aluminium
Tungsten
Platinum

⇒ If u is input, y is output and a, b are constants, the system y = au + b
is linear
is nonlinear
may be linear or nonlinear dependig on values of a and b
may be linear or nonlinear depending on value of u

⇒ Two capacitors of 2 μF and 4 μF capacitance are connected in series across a 30 V dc battery. After the capacitors have been charged, the voltage across them will be
15 V each
10 V and 20 V
20 V and 10 V
30 V each

⇒ In a Vidicon camera tube
grid G₁ accelerates electrons
grid G₂ accelerates electrons and grid G₃, slows down electrons
grid G₃ accelerates electrons and grid G₂ slows down electrons
both grids G₂ and G₃ accelerate electrons

⇒

Assertion (A): Field emission is substantially independent of temperature.

Reason (R): When a high electric field is created at metal surface field emission may occur.

Both A and R are true and R is correct explanation of A
Both A and R are true but R is not a correct explanation of A
A is true but R is false
A is false but R is true

⇒ In 8086 the flag which enables or disables external interrupts is
IF
DF
TF
CF

⇒ In the synthesis of RLC network
the number of elements in Bott-Duffin synthesis and Brune's synthesis are always equal
the number of elements in Bott-Duffin synthesis is more than that in Brune's synthesis
the number of elements in Bott-Duffin synthesis is less than that in Brune's synthesis
the number of elements in Bott-Duffin synthesis may be more or less than that in Brune's synthesis

⇒ For the K map in the given figure the simplified Boolean expressio
A C + A D + ABC
A C + A D + ABC
A C + A D + ACD
A C + A D + AB C

⇒ The conductivity of an intrinsic semiconductor is
generally less than that of a doped semiconductor
given by σ₁ = en_i (μ_n - μ_p)
given by σ₁ = en_i (μ_p + μ_n)
given by σ₁ = n_i (μ_n + μ_p)

⇒ The resistivity of ferrites is
very much lower than that of the ferromagnetic metals
slightly lower than that of the ferromagnetic materials
slightly higher than that of the ferromagnetic metals
very much higher than that of the ferromagnetic metals

⇒ An n type silicon bar 0.1 cm long and 100 μm² in cross-sectional area has a majority carrier concentration of 5 x 10²⁰/m³ and the carrier mobility is 0.13 m⁰/V-s at 300k. If the charge of an electron is 1.6 x 10^-19 coulomb, then the resistance of the bar is
10⁶ ohm
10⁴ ohm
10^-1 ohm
10^-4 ohm